赫狄通纳米
主营产品: 纳米材料
硫化镓晶体(99.995%)/GaS(Gallium-Sulfide)
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订货量(件)
¥7450.00
≥1
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生产厂商:HQ Graphene
产品信息
GaS (alpha phase) is a semiconductor with an indirect band gap of ~2.6 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. α-GaS belongs to the group-13 post-transition metal monochalcogenides.
The Gallium sulfide crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm. The crystals are yellow colored and transparent.
硫化镓晶体 GaS(Gallium Sulfide)
晶体尺寸:~10毫米
电学性能:半导体
晶体结构:六边形
晶胞参数:a = 0.360, b = 0.640 nm, c = 1.544 nm, α = β = 90°, γ = 120°
晶体类型:合成
晶体纯度:>99.995%
X-ray diffraction on a GaS single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10, 12, 14
Powder X-ray diffraction (XRD) of a single crystal GaS. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal alpha phase GaS by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal GaS. Measurement was performed with a 785 nm Raman system at room temperature.